Authors:	A. Yimam, D. Colucci, C. Caer, D. Yudistiri, Y. De Koninck, H. Sar, M. Barishnikova, P. Verheyen, J. Van Campenhout, B. Kunert, D. Van Thourhout, G. Morthier
Title:	Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon
Format:	International Journal
Publication date:	6/2025
Journal/Conference/Book:	Optics Express
Editor/Publisher:	Optica,
Volume(Issue):	33(13) p.27929-27941
DOI:	10.1364/OE.566045
Citations:	Look up on Google Scholar
Download:	(4.5MB)

Abstract

The static and dynamic characteristics of electrically injected monolithic nano-ridge lasers emitting around the wavelength of 1030 nm are comprehensively investigated, providing critical insights into their performance and identifying pathways for future improvement. Key laser parameters such as the D-factor, the K-factor, the differential gain and the gain compression factor are extracted. Recombination coefficients and carrier escape times are determined by taking the effective carrier capture times derived from the small-signal modulation response. Additionally, the impact of the nano-ridge box size on the recombination coefficients is evaluated, highlighting the role of structural design in optimizing device performance and reliability.

Related Research Topics

• IIIV microlasers epitaxially grown on silicon

Related Projects

• ERC-AdG: NARIOS (Nano-Ridge Engineering for Densely Integrated III-V Lasers Directly Grown on Silicon)