Surface emitting laser

Abstract

A surface emitting lasing device (100) is described comprising a substrate (110) and an array (120) of parallel nano-ridge devices (120a, 120b, 120c, …) epitaxially grown on the substrate (110). The nano-ridge devices (120a, 120b, 120c, …) are configured for together forming a laser cavity supporting a slow light band-edge lasing mode for lasing across the array of parallel nano-ridge devices (120a, 120b, 120c, …) and being configured for coupling out said laser mode from the surface of the substrate (110) to enable surface emission.

Related Research Topics

• IIIV microlasers epitaxially grown on silicon